Accurate IGBT modeling under high-injection condition

A compact model of IGBT (Insulated-Gate Bipolar Transistor) is developed by considering the high-injection condition explicitly. The model distinguishes the MOSFET controlled part and the bipolar transistor controlled part explicitly by introducing internal potential nodes, which are solved iteratively. It is verified that the model calculates the potential distribution along the device identical to that of 2D-device numerical simulation results. It is demonstrated that accurate and stable switching simulation is realized with the developed model.