Electrical and Structural Properties of Ruthenium Film Grown by Atomic Layer Deposition Using Liquid-Phase Ru(CO) 3 (C 6 H 8 ) Precursor

We investigated effects of thermal annealing on Ru films deposited on the 8 inch Si substrates using a volatile liquid-phase Ru precursor, tricarbonyl-1,3-cyclohexadienyl ruthenium (Ru(CO) 3 (C 6 H 8 )) by an atomic layer deposition (ALD) technique. Structural and electrical properties of the films were characterized by scanning probe microscopy, X-ray diffractometry, sheet resistance. Grazing incidence X-ray diffraction (GIXRD) patterns show typical Ru hexagonal polycrystalline peaks as annealing temperature was increased. At the highest annealing temperature condition, T a = 700 °C electrical resistivity become 6 times less than in as-deposited films.