Novel SiGe Semiconductor Devices for Cryogenic Power Electronics

It is predicted that systems for electrical power generation, conversion and distribution on ships and aerospace vehicles could be made smaller, lighter, more efficient, more versatile, and lower maintenance by operating these systems—partly or entirely—at cryogenic temperatures. In view of this, we have taken initial steps in the investigation and development of SiGe semiconductor devices for cryogenic power applications. We have (1) simulated, designed, fabricated and characterized SiGe power diodes, and (2) evaluated these SiGe diodes in cryogenic power converters. Our target low‐end temperature is 55 K, although we characterize devices and circuits down to approximately 30 K. We have demonstrated, experimentally, favorable characteristics for SiGe power diodes and have shown higher conversion efficiency compared to equivalent Si power diodes in a 100‐W boost switching DC‐DC power converter, over an ambient temperature range of 300 K down to approximately 30 K.