Range Distribution Parameters and Electronic Stopping Power for19F+Ions in SnO2, Indium–Tin Oxide, AgGaSe2and AgGaS2: Comparison Between Theory and Experiment

Range distributions of fluorine for 19F+ implantation into SnO2, indium–tin oxide, AgGaS2 and AgGaSe2 are measured by using the 19F(p,αγ)16O resonant nuclear reactions. The electronic stopping cross sections for 19F ions in these materials are derived from the measured range distributions. These experimental results are compared with those obtained from the newest version of stopping and range computer code, SRIM2003. The values of projected range predicted by the SRIM2003 agree well with the measured values for AgGaS2 and AgGaSe2 substrates. However, the values given by the SRIM2003 substantially deviate from the experimental values for the oxide materials SnO2 and ITO.