Seven‐inch large‐size synthesis of monolayer hexagonal BN film by low‐pressure CVD

We report the large-size synthesis of atomic monolayer hexagonal boron nitride (h-BN) film on flexible Cu foil by a low-pressure chemical vapor deposition (CVD) method. The borazane powder was used as the precursor carried by mixed hydrogen/argon gases. By rolling the Cu foil substrate into a cylindrical shape, wafer-scale monolayer h-BN film has been achieved at a size over 7 in. With the aid of PMMA, the h-BN monolayer was transferred onto a 4″ Si wafer for characterization and further electrical applications. This technique could be transferred to thin-film growth on any flexible substrates.