High-quality nitrogen-doped fluorinated silicon oxide films prepared by temperature-difference-based liquid-phase deposition

In this study we investigate the properties of nitrogen-doped fluorinated silicon oxide films deposited on silicon using hydrosilicofluoric acid and ammonium hydroxide aqua as sources by the temperature-difference-based liquid-phase deposition method. The deposition rate increases with the concentration of ammonium hydroxide aqua and the deposition temperature. Fluorine and nitrogen atomic concentrations increase with the concentration of ammonium hydroxide aqua. In the study, the F atomic concentration of the deposited films can range from 5. 1% to 9.8%. The dielectric constant of the film is a function of the concentration of ammonium hydroxide aqua and the deposition temperature. At a deposition temperature of 40 °C, the dielectric constant can drop to 3.06 with 0.5 M NH 4 OH incorporation. It is suitable for intermetal dielectric application. The films also exhibit good passivation to moisture.