Development of EB inspection system EBeyeM for EUV mask
2010
We are developing new electron beam inspection system, named EBeyeM, which features high speed and high
resolution inspection for EUV mask. Because EBeyeM has the projection electron microscope technique, the scan time
of EBeyeM is much faster than that of conventional SEM inspection system.
We developed prototype of EBeyeM. The aim of prototype system is to prove the concept of EBeyeM and to estimate
the specification of system for 2Xnm and 1Xnm EUV mask.
In this paper, we describe outline of EBeyeM and performance results of the prototype system. This system has two
inspection mode. One is particle inspection and the other is pattern defect inspection. As to the sensitivity of EBeyeM
prototype system, the development target is 30nm for the particle inspection mode and 50nm for pattern defect
inspection mode. The performance of this system was evaluated. We confirmed the particle inspection mode of the
prototype system could detect 30nm PSL(Polystyrene Latex) and the sensitivity was much higher than conventional
optical blank inspection system. And we confirmed that the pattern defect sensitivity of the prototype system was
around 45nm. It was recognized that both particle inspection mode and pattern defect inspection mode met the
development target. It was estimated by the performance results of the prototype system that the specification of
EBeyeM would be able to achieve for 2Xnm EUV mask. As to 1Xnm EUV mask, we are considering tool concept to
meet the specification.
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