Flicker noise modelling of small geometry LDD MOSFETs

An analytical 1/f noise model based on the evaluation of channel charge in small geometry Lightly Doped Drain (LDD) MOSFETs is developed. The analysis includes the short channel, narrow width, LDD and DIBL effects. The intricacy of analyses when both the device dimensions are scaled together has been overcome and a simple model valid in the submicrometer range is presented. It is found that the noise in small geometry LDD MOSFETs is higher than that in the short channel LDD MOSFETs putting hard limit to miniaturisation widthwise.