Electrochemical growth of CuInSe2 thin film on different substrates from alkaline medium. Characterization of the films

The simultaneous electrodeposition of the system Cu–In–Se was investigated. The study was carried out at pH 8.5 using diethylentriamine as complexing agent for the Cu+2 ion. The synthesis of CuInSe2 semiconductor thin films was carried out by electrodeposition on different substrates [indium–tin oxide (ITO) on glass, aluminum and type 304 steel]. The simultaneous codeposition of the Cu, In, and Se was achieved by constant potential electrolysis technique in aqueous solutions containing the elements that conform this material. The deposits of CuInSe2 were about 4 μm thick, which is thick enough for the photovoltaic effect to take place. The as-deposited films were characterized by atomic emission spectroscopy with inductive coupling plasm (AES-ICP) and scanning electronic microscopy (SEM). Annealed films were characterized X-ray diffraction, optical NIR spectroscopy, and photoelectrochemical studies The films were obtained with a well-defined composition, very close to the expected one. Homogeneous deposit with chalcopyrite structure was produced. A In2O3 phase was also observed. Annealing of the film improved the crystallinity of the films. Good photo response, an appropriate absorption coefficient, and a band gap of 1.09 eV were obtained.