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M. Iqbal Mahmud
M. Iqbal Mahmud
GlobalFoundries
process conditions
Optoelectronics
Gate oxide
Electronic engineering
Engineering
2
Papers
1
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Hot Carrier Reliability Improvement of Thicker Gate Oxide nFET Devices in Advanced FinFETs.
2019
IRPS | International Reliability Physics Symposium
M. Iqbal Mahmud
A. Gupta
Maria Toledano Luque
N. Mavilla
Jennifer A. Johnson
Purushothaman Srinivasan
Abu Naser Zainuddin
S. Rao
S. Cimino
B. Min
T. Nigam
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Citations (1)
Reliability-Aware FinFET Design
2019
IEEE Electron Devices Technology and Manufacturing Conference
M. Toledano-Luque
P. Srinivasan. P. Paliwoda
S. Cimino
Z. Chbili
M. Iqbal Mahmud
A. Gupta
T. Shen
T. Kauerauf
B. Zhu
B. Min
T. Nigam
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