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Pouya Hashemi
Pouya Hashemi
GlobalFoundries
Electronic engineering
Materials science
Engineering physics
Electrical engineering
CMOS
5
Papers
32
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(Invited) Advanced Replacement High-K/Metal Gate Stack Engineering for High-Performance Strained Silicon-Germanium FinFETs with High Ge Content
2018
Pouya Hashemi
Takashi Ando
E. Cartier
John Bruley
C. H. Lee
Vijay Narayanan
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Prospects of High-Ge-Content Strained SiGe for Advanced FinFET Generations
2016
Pouya Hashemi
Karthik Balakrishnan
Takashi Ando
J. Bruley
John A. Ott
Sebastian U. Engelmann
Kevin K. Chan
Kam Leung Lee
Dae-Gyu Park
Renee T. Mo
Effendi Leobandung
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(Invited) Strained-SiGe Channel FinFETs for High-Performance CMOS: Opportunities and Challenges
2015
Pouya Hashemi
Karthik Balakrishnan
John A. Ott
Effendi Leobandung
Renee T. Mo
Dae-Gyu Park
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Citations (10)
First demonstration of high-Ge-content strained-Si 1−x Ge x (x=0.5) on insulator PMOS FinFETs with high hole mobility and aggressively scaled fin dimensions and gate lengths for high-performance applications
2014
IEDM | International Electron Devices Meeting
Pouya Hashemi
Karthik Balakrishnan
Sebastian U. Engelmann
John A. Ott
Ali Khakifirooz
Ashish Baraskar
Marinus Hopstaken
Joseph S. Newbury
Kevin K. Chan
Effendi Leobandung
Renee T. Mo
Dae-Gyu Park
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Citations (20)
(Invited) Strained SiGe on Insulator FinFETs: a P-FET Candidate for 10nm Node
2014
Pouya Hashemi
Karthik Balakrishnan
Amlan Majumdar
Sebastian U. Engelmann
Marinus Hopstaken
W. Kim
John A. Ott
Effendi Leobandung
Dae-Gyu Park
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