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Renee T. Mo
Renee T. Mo
GlobalFoundries
Electronic engineering
CMOS
Speech recognition
Materials science
Engineering physics
4
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31
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(Invited) CMOS Compatible High Performance IIIV Devices: Opportunities and Challenges
2016
Yanning Sun
Kuen-Ting Shiu
Cheng-Wei Cheng
Amlan Majumdar
Robert L. Bruce
Jeng-Bang Yau
Damon B. Farmer
Yu Zhu
Marinus Hopstaken
Martin M. Frank
Takashi Ando
K-L. Lee
John Rozen
Devendra K. Sadana
Vijay Narayanan
Renee T. Mo
Effendi Leobandung
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Prospects of High-Ge-Content Strained SiGe for Advanced FinFET Generations
2016
Pouya Hashemi
Karthik Balakrishnan
Takashi Ando
J. Bruley
John A. Ott
Sebastian U. Engelmann
Kevin K. Chan
Kam Leung Lee
Dae-Gyu Park
Renee T. Mo
Effendi Leobandung
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(Invited) Strained-SiGe Channel FinFETs for High-Performance CMOS: Opportunities and Challenges
2015
Pouya Hashemi
Karthik Balakrishnan
John A. Ott
Effendi Leobandung
Renee T. Mo
Dae-Gyu Park
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First demonstration of high-Ge-content strained-Si 1−x Ge x (x=0.5) on insulator PMOS FinFETs with high hole mobility and aggressively scaled fin dimensions and gate lengths for high-performance applications
2014
IEDM | International Electron Devices Meeting
Pouya Hashemi
Karthik Balakrishnan
Sebastian U. Engelmann
John A. Ott
Ali Khakifirooz
Ashish Baraskar
Marinus Hopstaken
Joseph S. Newbury
Kevin K. Chan
Effendi Leobandung
Renee T. Mo
Dae-Gyu Park
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Citations (20)
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