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Marinus Hopstaken
Marinus Hopstaken
GlobalFoundries
AND gate
Electronic engineering
Electron mobility
Electrostatics
Leakage (electronics)
2
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20
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0
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First demonstration of high-Ge-content strained-Si 1−x Ge x (x=0.5) on insulator PMOS FinFETs with high hole mobility and aggressively scaled fin dimensions and gate lengths for high-performance applications
2014
IEDM | International Electron Devices Meeting
Pouya Hashemi
Karthik Balakrishnan
Sebastian U. Engelmann
John A. Ott
Ali Khakifirooz
Ashish Baraskar
Marinus Hopstaken
Joseph S. Newbury
Kevin K. Chan
Effendi Leobandung
Renee T. Mo
Dae-Gyu Park
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ゲートファーストプロセスによる遠隔界面層洗浄技術及びV t チューニング双極子を用いた極端スケールHfO 2 (EOT0.42nm)における移動度機構の理解
2009
IEDM | International Electron Devices Meeting
Takashi Ando
Martin M. Frank
Kisik Choi
Chang-Hwan Choi
John Bruley
Marinus Hopstaken
Matthew Copel
E. Cartier
A. Kerber
Alessandro C. Callegari
Dianne L. Lacey
Stephen L. Brown
Qingyun Yang
Vijay Narayanan
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