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C. Fukamoto
C. Fukamoto
Tunnel magnetoresistance
Electronic engineering
Magnetoresistive random-access memory
Computer science
Electrical engineering
2
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27
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A study for 0.18 /spl mu/m high-density MRAM
2004
VLSIT | Symposium on VLSI Technology
Makoto Motoyoshi
I. Yamamura
W. Ohtsuka
M. Shouji
Hajime Yamagishi
M. Nakamura
H. Yamada
Kaori Tai
T. Kikutani
Tsutomu Sagara
K. Moriyama
Hironobu Mori
C. Fukamoto
Mamoru Watanabe
R. Hachino
Hiroshi Kano
Kazuhiro Bessho
Hiroaki Narisawa
Masanori Hosomi
Nobumichi Okazaki
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Citations (15)
A study for 0.18 m high-density MRAM
2004
Symposium on VLSI Technology
Masahiro Motoyoshi
Ikuhiro Yamamura
W. Ohtsuka
Miyuki Shouji
Hideki Yamagishi
Masahiro Nakamura
Hiroshi Yamada
Kuo-Chung Tai
Tatsuya Kikutani
Takeshi Sagara
Koichi Moriyama
Hidezo Mori
C. Fukamoto
Mamoru Watanabe
R. Hachino
Hiroshi Kano
Katsuji Bessho
Hiroaki Narisawa
Masaaki Hosomi
Naoaki Okazaki
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Citations (12)
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