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Hironobu Mori
Hironobu Mori
Electronic engineering
Magnetoresistive random-access memory
Materials science
Tunnel magnetoresistance
Electrical engineering
4
Papers
20
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A study for 0.18 /spl mu/m high-density MRAM
2004
VLSIT | Symposium on VLSI Technology
Makoto Motoyoshi
I. Yamamura
W. Ohtsuka
M. Shouji
Hajime Yamagishi
M. Nakamura
H. Yamada
Kaori Tai
T. Kikutani
Tsutomu Sagara
K. Moriyama
Hironobu Mori
C. Fukamoto
Mamoru Watanabe
R. Hachino
Hiroshi Kano
Kazuhiro Bessho
Hiroaki Narisawa
Masanori Hosomi
Nobumichi Okazaki
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Magnetic memory using a ferromagnetic tunnel junction element
2003
Hironobu Mori
Katsutoshi Moriyama
Nobumichi Okazaki
Hiroshi Yoshihara
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High-Performance 1T1MTJ MRAM Technology with an Amorphous MTJ Material
2002
The Japan Society of Applied Physics
Makoto Motoyoshi
K. Moriyama
Hironobu Mori
C. Fukumoto
H. Itoh
Hiroshi Kano
Kazuhiro Bessho
Hiroaki Narisawa
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High-performance MRAM technology with an improved magnetic tunnel junction material
2002
VLSIT | Symposium on VLSI Technology
Makoto Motoyoshi
K. Moriyama
Hironobu Mori
C. Fukumoto
H. Itoh
Hiroshi Kano
Kazuhiro Bessho
H. Narisawe
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Citations (5)
1