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A. A. Bostwick
A. A. Bostwick
Materials science
electronic properties
Epitaxy
Nanotechnology
Nanostructure
3
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Growth and electronic properties of epitaxial Si nanostructures
2003
Andreas Klust
A. A. Bostwick
Qiuming Yu
Marjorie A. Olmstead
T. Ohta
Fumio S. Ohuchi
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Initial stages of Al_xSe y heteroepitaxial growth on Si(111)
2001
J.A. Adams
A. A. Bostwick
F. S. Ohuchi
M.A. Olmstead
E. Rotenberg
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Electronic Structure of a Heteroepitaxially-Passivated Si(111) Surface: GaSe-terminated Si(111)
2001
M.A. Olmstead
J.A. Adams
A. A. Bostwick
F. S. Ohuchi
R. Rudolf
C. Pettenkoffer
E. Rotenberg
R. Fritsche
A. Klein
W. Jaegermann
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