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Takeshi Hoshi
Takeshi Hoshi
Stack (abstract data type)
Fluorine
Electronic engineering
Silicon nitride
Electrode
5
Papers
11
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Effect of Fluorine on Interface Characteristics in Low-Temperature CMIS Process with HfO2 Metal Gate Stacks
2005
Japanese Journal of Applied Physics
Takaoki Sasaki
Yasushi Akasaka
Kazuhiro Miyagawa
Takeshi Hoshi
Yasuhiko Watanabe
Fumio Ootsuka
Mitsuo Yasuhira
Tsunetoshi Arikado
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Citations (3)
Effect of Boron and Fluorine Incorporation in SiON Gate Insulator with Optimized Nitrogen Profile
2004
Japanese Journal of Applied Physics
Takaoki Sasaki
Fumio Ootsuka
Hiroji Ozaki
Takeshi Hoshi
Mitsuhiro Tomikawa
Mitsuo Yasuhira
Tsunetoshi Arikado
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Citations (4)
SiN-capped HfSiON gate stacks with improved bias temperature instabilities for 65 nm-node low-standby-power transistors
2004
VLSIT | Symposium on VLSI Technology
Yasuyuki Tamura
Takaoki Sasaki
Naoki Izumi
Fumio Ootsuka
Mitsuo Yasuhira
Takeshi Hoshi
S Kume
H. Amai
T. Ida
Takayuki Aoyama
Satoshi Kamiyama
Kazuyoshi Torii
Hiroshi Kitajima
Tsunetoshi Arikado
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Citations (4)
Effect of Fluorine on Interface Characteristics in Low-temperature CMIS Process with HfO2 Metal Gate Stacks
2004
The Japan Society of Applied Physics
Takaoki Sasaki
Yasushi Akasaka
Kazuhiro Miyagawa
Takeshi Hoshi
Yasuhiko Watanabe
Fumio Ootsuka
Mitsuo Yasuhira
Tsunetoshi Arikado
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The influence of silicon nitride cap on NBTI and fermi pinning in HfO 2 gate stacks
2003
Takaoki Sasaki
Fumio Ootsuka
Takeshi Hoshi
Takaaki Kawahara
Takeshi Maeda
Mitsuo Yasuhira
Tsunetoshi Arikado
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