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Laurent Dussault
Laurent Dussault
Centre national de la recherche scientifique
Analytical chemistry
Materials science
X-ray photoelectron spectroscopy
Plasma
Atomic layer deposition
5
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17
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Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C–V
2014
Applied Surface Science
Fabien Piallat
Virginie Beugin
Remy Gassilloud
Laurent Dussault
B. Pelissier
C. Leroux
Pierre Caubet
C. Vallée
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Citations (10)
Evaluation of plasma parameters on PEALD deposited TaCN
2013
Microelectronic Engineering
Fabien Piallat
Virginie Beugin
Remy Gassilloud
Philippe Michallon
Laurent Dussault
B. Pelissier
Timo Asikainen
Jan Willem Maes
François Martin
Pierre Morin
C. Vallée
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Citations (7)
Investigation on full 6'' masks using innovative solutions for direct physico-chemical analyses of mask backglass contamination and haze
2013
Microelectronic Engineering
B. Pelissier
Laurent Dussault
Felix Dufaye
Stuart Gough
J. Hamonne
O. Chaix-Pluchery
P. Sergent
M Tissier
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Characterisation of GeTe Phase Change Material Deposited by Plasma Assisted MOCVD
2012
Laurent Dussault
C. Vallée
Manuela Aoukar
Dominique Jourde
Philippe Michallon
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Investigation on full 6 masks using innovative solutions for direct physico-chemical analyses of mask contamination and haze
2011
Microelectronic Engineering
Laurent Dussault
B. Pelissier
Felix Dufaye
Stuart Gough
J. Hamonne
O. Chaix-Pluchery
P. Sergent
M Tissier
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