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Byung Keun Hwang
Byung Keun Hwang
Dow Chemical Company
Silicon nitride
Atomic layer deposition
Plasma
Materials science
Cathode
3
Papers
21
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Hollow Cathode Plasma (HCP) Enhanced Atomic Layer Deposition of Silicon Nitride (SiNx) Thin Films Using Pentachlorodisilane (PCDS)
2019
Su Min Hwang
Aswin L. N. Kondusamy
Zhiyang Qin
Harrison Sejoon Kim
Xin Meng
Jiyoung Kim
Byung Keun Hwang
Xiaobing Zhou
Telgenhoff Michael D
Jeanette Young
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Citations (2)
Investigation of the Physical Properties of Plasma Enhanced Atomic Layer Deposited Silicon Nitride as Etch Stopper
2018
ACS Applied Materials & Interfaces
Harrison Sejoon Kim
Xin Meng
Si Joon Kim
Antonio T. Lucero
Lanxia Cheng
Young-Chul Byun
Joy S. Lee
Su Min Hwang
Aswin L. N. Kondusamy
Robert M. Wallace
Gary Goodman
Alan S. Wan
Michael Telgenhoff
Byung Keun Hwang
Jiyoung Kim
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Citations (8)
Hollow Cathode Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using Pentachlorodisilane
2018
ACS Applied Materials & Interfaces
Xin Meng
Harrison Sejoon Kim
Antonio T. Lucero
Su Min Hwang
Joy S. Lee
Young-Chul Byun
Jiyoung Kim
Byung Keun Hwang
Xiaobing Zhou
Jeanette Young
Michael Telgenhoff
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Citations (11)
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