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Yoshiaki Hashiba
Yoshiaki Hashiba
Hitachi
Electronic engineering
Epitaxy
NMOS logic
Chemical vapor deposition
Engineering
2
Papers
5
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Technology Breakthrough of Low Temperature, Low Defect, and Low Cost SiGe Selective Epitaxial Growth (L 3 SiGe SEG) Process for 45nm Node and Beyond
2007
VLSIT | Symposium on VLSI Technology
Y. Shimamune
Masahiro Fukuda
M. Koiizuka
Akira Katakami
A. Hatada
K. Ikeda
Y. S. Kim
Kazuo Kawamura
Naoyoshi Tamura
T. Mori
Atsushi Moriya
Yoshiaki Hashiba
Yasuhiro Inokuchi
Yasuo Kunii
M. Kase
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Citations (1)
Development of High-Throughput Batch-Type Epitaxial Reactor
2006
Yasuo Kunii
Yasuhiro Inokuchi
Jie Wang
Katsuhiko Yamamoto
Atsushi Moriya
Yoshiaki Hashiba
Harushige Kurokawa
Junichi Murota
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Citations (4)
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