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F. Chave
F. Chave
Materials science
Optoelectronics
High-κ dielectric
CMOS
Metal
4
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Analyse du procédé de gravure par plasma des interfaces métalliques dans les grilles de transistors "High-K Métal" en technologie CMOS 28nm
2011
F. Chave
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Etching issues with High-K Metal Gate stacks for CMOS 28nm technology
2011
F. Chave
Laurent Vallier
Pascal Gouraud
S. Baudot
C. Roukoss
Pierre Caubet
Olivier Joubert
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Study of Metallic Interfaces Etching for High-K Metal Gate stacks in CMOS 28 nm Technology
2011
F. Chave
Laurent Vallier
Pascal Gouraud
S. Baudot
Camille Petit-Etienne
C. Verove
Olivier Joubert
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Plasma Etching Challenges for Porous SiOCH Integration In Advanced Interconnect Levels
2011
T. Chevolleau
F. Chave
T. David
N. Posseme
L. Vallier
Erwine Pargon
M. Darnon
F. Bailly
O. Joubert
R. Bouyssou
Sebastien Barnola
Julien Ducoté
P. Gouraud
C. Verove
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