Fabrication of Graphene Directly on SiO2 without Transfer Processes by Annealing Sputtered Amorphous Carbon

We fabricated multilayer graphene directly on SiO2 by annealing sputtered amorphous carbon with a catalyst – a simple non-chemical vapor deposition method – without the use of complicated transfer processes. Structural analysis revealed that the graphene sheets formed an epitaxial structure aligned to the Co(111) surface between the Co catalyst and SiO2 dielectric. In the multilayer graphene, a resistivity of approximately 500 µΩ cm was obtained, which is one order of magnitude higher than that of highly oriented pyrolytic graphite.