Resistivity of borondoped polycrystalline silicon

M. Y. Ghannam and R. W. Dutton Citation: Applied Physics Letters 52, 1222 (1988); doi: 10.1063/1.99164 View online: http://dx.doi.org/10.1063/1.99164 View Table of Contents: http://scitation.aip.org/content/aip/journal/apl/52/15?ver=pdfcov Published by the AIP Publishing Articles you may be interested in Properties of boron-doped thin films of polycrystalline silicon AIP Conf. Proc. 1569, 314 (2013); 10.1063/1.4849283 Analysis of low-frequency noise in boron-doped polycrystalline silicon–germanium resistors Appl. Phys. Lett. 81, 2578 (2002); 10.1063/1.1511815 Resistivity of boron-doped diamond microcrystals Appl. Phys. Lett. 72, 2445 (1998); 10.1063/1.121680 Solid phase epitaxial regrowth of borondoped polycrystalline silicon deposited by lowpressure chemical vapordeposition Appl. Phys. Lett. 51, 611 (1987); 10.1063/1.98363 Gallium Diffusions into Silicon and BoronDoped Silicon J. Appl. Phys. 42, 3750 (1971); 10.1063/1.1659681