Reaction Kinetics of Germanium Nanowire Growth on Inductively Heated Copper Surfaces

This article describes the chemical kinetics of germanium nanowire growth on inductively heated copper surfaces using diphenylgermane as a precursor. Inductive heating of metal surfaces presents a simple, rapid, and contact-free method to activate the direct growth of nanowires on metal surfaces. We show the main effects of synthesis temperature, duration, precursor concentration on the morphology, and loading of the nanowire film. We describe the complex interplay of precursor degradation, nucleation, and growth in context of a multistep reaction mechanism. We studied the temporal evolution of nanowire loading and morphology to develop a kinetic model, which predicts critical thresholds that define the onset of sequential axial and radial nanowire growth modes. These results may be used to commercially scale a nanowire growth process.