Formation of sub-7 nm feature size PS-b-P4VP block copolymer structures by solvent vapour process
2014
The nanometer range structure produced by thin films of diblock copolymers makes them a great of interest as templates
for the microelectronics industry. We investigated the effect of annealing solvents and/or mixture of the solvents in case
of symmetric Poly (styrene- block -4vinylpyridine) (PS-b-P4VP) diblock copolymer to get the desired line patterns. In this
paper, we used different molecular weights PS- b -P4VP to demonstrate the scalability of such high χ BCP system which
requires precise fine-tuning of interfacial energies achieved by surface treatment and that improves the wetting property,
ordering, and minimizes defect densities. Bare Silicon Substrates were also modified with polystyrene brush and ethylene
glycol self-assembled monolayer in a simple quick reproducible way. Also, a novel and simple in situ hard mask technique
was used to generate sub-7nm Iron oxide nanowires with a high aspect ratio on Silicon substrate, which can be used to
develop silicon nanowires post pattern transfer.
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