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Characterization of Epitaxial Si:C:P and Si:P Layers for Source/Drain Formation in Advanced Bulk FinFETs
Characterization of Epitaxial Si:C:P and Si:P Layers for Source/Drain Formation in Advanced Bulk FinFETs
2014
Erik Rosseel
Harald Profijt
Andriy Hikavyy
John Tolle
S. Kubicek
Geert Mannaert
Caroline L'abbe
Kurt Wostyn
Naoto Horiguchi
Trudo Clarysse
Brigitte Parmentier
Sathishkumar Dhayalan
Hugo Bender
Jan Maes
Sandeep Mehta
Roger Loo
Keywords:
Epitaxy
Electronic engineering
Materials science
Mechanical engineering
Silicon
Engineering physics
Electrochemistry
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