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Harald Profijt
Harald Profijt
Katholieke Universiteit Leuven
Epitaxy
Materials science
Optoelectronics
Inorganic chemistry
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5
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86
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Fundamentals of Ge1−xSnx and SiyGe1−x-ySnx RPCVD epitaxy
2017
Materials Science in Semiconductor Processing
Joe Margetis
Aboozar Mosleh
Seyed Amir Ghetmiri
Sattar Al-Kabi
Wei Dou
Wei Du
Nupur Bhargava
Shui-Qing Yu
Harald Profijt
David Kohen
Roger Loo
Anurag Vohra
John Tolle
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Citations (21)
Selective epitaxial growth of high-P Si:P for dource/drain formation in advanced Si nFETs
2016
Erik Rosseel
Sathish Kumar Dhayalan
Andriy Hikavyy
Roger Loo
Harald Profijt
David Kohen
S. Kubicek
T. Chiarella
Hao Yu
Naoto Horiguchi
Dan Mocuta
Kathy Barla
Aaron Thean
Greg Bartlett
Joe Margetis
Naipur Bhargava
John Tolle
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(Invited) Selective Epitaxial Growth of High-P Si:P for Source/Drain Formation in Advanced Si nFETs
2016
Erik Rosseel
Sathish Kumar Dhayalan
Andriy Hikavyy
Roger Loo
Harald Profijt
David Kohen
S. Kubicek
T. Chiarella
Hao Yu
Naoto Horiguchi
D. Mocuta
Kathy Barla
Aaron Thean
Gregory M. Bartlett
Joe Margetis
Nupur Bhargava
John Tolle
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Citations (26)
Low-temperature pre-epitaxy surface cleaning of Si and SiGe
2015
Harald Profijt
Samuel Suhard
Erik Rosseel
John Tolle
Hans Mertens
Sathish Kumar Dhayalan
Andriy Hikavyy
Doran Weeks
Frank Holsteyns
Roger Loo
Sandeep Mehta
Jan Willem Maes
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Characterization of Epitaxial Si:C:P and Si:P Layers for Source/Drain Formation in Advanced Bulk FinFETs
2014
Erik Rosseel
Harald Profijt
Andriy Hikavyy
John Tolle
S. Kubicek
Geert Mannaert
Caroline L'abbe
Kurt Wostyn
Naoto Horiguchi
Trudo Clarysse
Brigitte Parmentier
Sathishkumar Dhayalan
Hugo Bender
Jan Maes
Sandeep Mehta
Roger Loo
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Citations (39)
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