Silicon carbide dynistor

are reporting the fabrication of silicon carbide p-n-p-n dynistor structures by the technique of Ref. 5. A structure consisting of three layers, n-p-n+, is grown in a series of steps in a single technological process on a p+-SiC(6H) substrate. Aluminum is added to the molten solution to produce p-SiC; the donor impurity is qitrogen. The contacts are deposited, an the mesa struc­tures are fabricated, by the methods used for SiC diodes. 2 Aluminum is used as the material for mak­ing contact to the n+-siC and the p+-siC. The size of the mesa structures is 150