Vertical devices of self-assembled hybrid organic/inorganic monolayers based on tungsten polyoxometalates

In this work, metal-insulator-semiconductor (MIS) devices containing self-assembled monolayers (SAM) of tungsten polyoxometalates (POMs) have been fabricated with a CMOS-compatible process. Electrical characterization in terms of C-V and I-V measurements has followed, and the resulting data have been extensively studied in order to assess the charge transport phenomena in such structures. STM measurements on the SAMs have completed the characterization and further substantiated our view of the possible electron transport mechanisms involved, as well as the charge confinement properties of POM monolayers that could be exploited in viable molecular electronic devices.