SRAM Cell Static Noise Margin and VMIN Sensitivity to Transistor Degradation

The SRAM cell sensitivity to transistor degradation is understood using a novel test methodology. A new, semi-empirical model that captures the observed trends is derived. The key findings include (a) cell sensitivity to NBTI degradation is high when low NMOS V T / high PMOS V T combination arises (b) NBTI contribution to product V MIN drift arises mainly from the mean V TP shift which moves the overall distribution, and (c) NBTI-induced variance is overwhelmed by the time-zero variation of the six transistors of the SRAM. These findings enable a quantitative prediction that the NBTI-induced V MIN increase during burn-in is of the order of the NBTI-induced V T shift