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J. S. Bae
J. S. Bae
Samsung
Tunnel magnetoresistance
Nuclear magnetic resonance
Saturation (magnetic)
Condensed matter physics
Magnetoresistive random-access memory
3
Papers
9
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Evaluation of Mechanical Reliability of Micro Bump in Semiconductors Through a Shear Test
2021
Y. J. Cho
M. B. Han
J. S. Bae
I. J. Choi
D. S. Choi
H. G. Noh
S. J. Yoo
G. H. Jang
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Improvement of writing margin in MRAM with novel shape
2005
Journal of Applied Physics
S.C. Oh
Jaehak Lee
Ho Jun Kim
Y.K. Ha
J. S. Bae
K. T. Nam
Eok-su Kim
S.O. Park
Hyung-Gon Kim
U In Chung
J.T. Moon
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Key factors to enhance the switching characteristics in submicron MRAM cells
2004
IEEE Transactions on Magnetics
Hyoung-joon Kim
Joo-hyun Lee
I. G. Baek
Y.K. Ha
J. S. Bae
S.C. Oh
S.O. Park
U In Chung
N.I. Lee
H.K. Kang
J.T. Moon
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Citations (6)
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