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S.C. Oh
S.C. Oh
Samsung
Magnetoresistive random-access memory
Tunnel magnetoresistance
Nuclear magnetic resonance
Magnetic storage
Physics
5
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21
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Reliability of STT-MRAM for various embedded applications
2021
IRPS | International Reliability Physics Symposium
Sung-hee Han
Jung Hyoung Lee
K. S. Suh
K. T. Nam
D. E. Jeong
S.C. Oh
Sun-Kyu Hwang
Y. Ji
K.H. Lee
Yoon-Jong Song
Y. G. Hong
Gitae Jeong
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Challenges of Stt-Mram for High Density Memory
2013
S.C. Oh
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Switching Properties in Spin Transper Torque MRAM with sub-5Onm MTJ size
2006
NVMTS | Non-Volatile Memory Technology Symposium
K. T. Nam
S.C. Oh
J. E. Lee
J.H. Jeong
In Gyu Baek
E. K. Yim
J. S. Zhao
S.O. Park
H.S. Kim
U In Chung
J.T. Moon
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Improvement of writing margin in MRAM with novel shape
2005
Journal of Applied Physics
S.C. Oh
Jaehak Lee
Ho Jun Kim
Y.K. Ha
J. S. Bae
K. T. Nam
Eok-su Kim
S.O. Park
Hyung-Gon Kim
U In Chung
J.T. Moon
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Key factors to enhance the switching characteristics in submicron MRAM cells
2004
IEEE Transactions on Magnetics
Hyoung-joon Kim
Joo-hyun Lee
I. G. Baek
Y.K. Ha
J. S. Bae
S.C. Oh
S.O. Park
U In Chung
N.I. Lee
H.K. Kang
J.T. Moon
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Citations (6)
1