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E. K. Yim
E. K. Yim
Samsung
Electronic engineering
Analytical chemistry
Resistive random-access memory
Optoelectronics
Non-blocking I/O
4
Papers
668
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Investigation on Resistive Memory Switching Mechanism of NiO
2007
Integrated Ferroelectrics
Daesig Kim
Sun-Kyoung Seo
D.-S. Suh
R. Jung
Chihoon Lee
J.K. Shin
Inkyung Yoo
In Gyu Baek
Hyoung-joon Kim
E. K. Yim
Seung-Hoon Park
Hyun-Su Kim
U In Chung
Joo-Tae Moon
Byungki Ryu
Jin Suk Kim
B. H. Park
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Switching Properties in Spin Transper Torque MRAM with sub-5Onm MTJ size
2006
NVMTS | Non-Volatile Memory Technology Symposium
K. T. Nam
S.C. Oh
J. E. Lee
J.H. Jeong
In Gyu Baek
E. K. Yim
J. S. Zhao
S.O. Park
H.S. Kim
U In Chung
J.T. Moon
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Citations (12)
Electrical observations of filamentary conductions for the resistive memory switching in NiO films
2006
Applied Physics Letters
Dong-chan Kim
Sun-Kyoung Seo
Seung-Eon Ahn
Dongseok Suh
M. J. Lee
B.-H. Park
In-kyeong Yoo
In Gyu Baek
Hee Goo Kim
E. K. Yim
Jeong-hee Lee
S.O. Park
Hee-Kyung Kim
U In Chung
Joo-Tae Moon
Byungki Ryu
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Citations (480)
Improvement of resistive memory switching in NiO using IrO2
2006
Applied Physics Letters
Dong-chan Kim
M. J. Lee
Seung-Eon Ahn
Sun-Kyoung Seo
Ju-chul Park
In-kyeong Yoo
I. G. Baek
Hee Goo Kim
E. K. Yim
Jeong-hee Lee
S.O. Park
Hee-Kyung Kim
U In Chung
Joo-Tae Moon
Byungki Ryu
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Citations (176)
1