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J.T. Moon
J.T. Moon
Samsung
Tunnel magnetoresistance
Nuclear magnetic resonance
Magnetoresistive random-access memory
Magnetic storage
Materials science
4
Papers
21
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Switching Properties in Spin Transper Torque MRAM with sub-5Onm MTJ size
2006
NVMTS | Non-Volatile Memory Technology Symposium
K. T. Nam
S.C. Oh
J. E. Lee
J.H. Jeong
In Gyu Baek
E. K. Yim
J. S. Zhao
S.O. Park
H.S. Kim
U In Chung
J.T. Moon
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Citations (12)
Germanium ion implantation to Improve Crystallinity during Solid Phase Epitaxy and the effect of AMU Contamination
2006
K. S. Lee
D. H. Yoo
G. H. Son
C. H. Lee
J. H. Noh
J. J. Han
Y. S. Yu
Y.W. Hyung
J. K. Yang
D. G. Song
T. J. Lim
Y. K. Kim
S. C. Lee
H. D. Lee
J.T. Moon
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Improvement of writing margin in MRAM with novel shape
2005
Journal of Applied Physics
S.C. Oh
Jaehak Lee
Ho Jun Kim
Y.K. Ha
J. S. Bae
K. T. Nam
Eok-su Kim
S.O. Park
Hyung-Gon Kim
U In Chung
J.T. Moon
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Citations (3)
Key factors to enhance the switching characteristics in submicron MRAM cells
2004
IEEE Transactions on Magnetics
Hyoung-joon Kim
Joo-hyun Lee
I. G. Baek
Y.K. Ha
J. S. Bae
S.C. Oh
S.O. Park
U In Chung
N.I. Lee
H.K. Kang
J.T. Moon
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Citations (6)
1